1/4 STPS60L15CW november 2002 - ed: 0a low drop or-ing power schottky diode ? dual center tap schottky rectifier packaged in to-247 and suited for n+1 redundancy operations, this device has an optimized forward voltage drop to reduce the power losses in the application. description n very low forward voltage drop for less power dissipation and reduced heatsink size n operation junction temperature: 125c n reverse voltage suited to or-ing of 3v, 5v and 12v rails features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 15 v i f(rms) rms forward current 40 a i f(av) average forward current tcase = 115c d = 0.5 per diode 30 a per device 60 i fsm surge non repetitive forward cur- rent tp = 10 ms sinusoidal 400 a i rrm peak repetitive reverse current tp = 2 m s f = 1khz 2a i rsm non repetitive peak reverse current tp = 100 m s 3a t stg storage temperature range -65 to+150 c t j maximum operating junction temperature * 125 c dv/dt critical rate of rise of reverse voltage 10000 v/ m s absolute ratings (limiting values, per diode) a1 k a2 i f(av) 2x30a v rrm 15 v tj (max) 125c v f (max) 0.33 v major product characteristics to-247 a1 k a2 *: dptot dtj rth j a < - 1 () thermal runaway condition for a diode on its own heatsink
STPS60L15CW 2/4 symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current tj = 25c v r =v rrm 16 ma tj = 100c 0.35 0.85 a v f * forward voltage drop tj = 25 ci f =30a 0.41 v tj=25 ci f =60a 0.49 tj = 125c i f =30a 0.27 0.33 tj = 125c i f =60a 0.39 0.44 pulse test : * tp = 380 m s, d <2% to evaluate the conduction losses use the following equation: p=0.22xi f(av) + 0.0036 i f 2 (rms) static electrical characteristics (per diode) symbol parameter value unit r th(j-c) junction to case per diode 0.8 c/w total 0.55 r th(c) coupling 0.3 c/w when the diodes 1 and 2 are used simultaneously: t j (diode 1 ) = p (diode 1) x r th(j-c) (per diode ) + p (diode 2) x r th(c) thermal resistances 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0 5 10 15 20 25 30 35 40 p (w) f(av) i (a) f(av) t d =tp/t tp d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 1 fig. 1: conduction losses versus average current). 0 5 10 15 20 25 30 35 0 25 50 75 100 125 i (a) f(av) t (c) amb r=r th(j-a) th(j-c) r =15c/w th(j-a) fig. 2: average forward current versus ambient temperature ( d =0.5).
STPS60L15CW 3/4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 z/r th(j-c) th(j-c) t (s) p t d =tp/t tp single pulse d = 0.5 d = 0.2 d = 0.1 fig. 4: relative variation of thermal impedance junction to case versus pulse duration. 1.e+00 1.e+01 1.e+02 1.e+03 1.e+04 0.0 2.5 5.0 7.5 10.0 12.5 15.0 i (ma) r v (v) r t =125c j t =100c j t =75c j t =50c j t =25c j fig. 5: reverse leakage current versus reverse voltage applied (typical values). 1.0 10.0 1 10 100 c(nf) f=1mhz v =30mv t =25c osc j v (v) r fig. 6: junction capacitance versus reverse voltage applied (typical values). 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i (a) fm v (v) fm t =125c (maximum values) j t =25c (maximum values) j t =125c (typical values) j fig. 7: forward voltage drop versus forward current. 0 50 100 150 200 250 300 350 400 450 500 1.e-03 1.e-02 1.e-01 1.e+00 i (a) m t(s) t =25c c t =50c c t =100c c i m t d =0.5 fig. 3: non repetitive surge peak forward current versus overload duration (maximum values).
STPS60L15CW 4/4 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com package mechanical data to-247 f2 f1 v2 l4 l2 l1 l3 d l l5 me h v v a dia. f3 f4 g = = f(x3) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 d 2.20 2.60 0.086 0.102 e 0.40 0.80 0.015 0.031 f 1.00 1.40 0.039 0.055 f1 3.00 0.118 f2 2.00 0.078 f3 2.00 2.40 0.078 0.094 f4 3.00 3.40 0.118 0.133 g 10.90 0.429 h 15.45 15.75 0.608 0.620 l 19.85 20.15 0.781 0.793 l1 3.70 4.30 0.145 0.169 l2 18.50 0.728 l3 14.20 14.80 0.559 0.582 l4 34.60 1.362 l5 5.50 0.216 m 2.00 3.00 0.078 0.118 v5 5 v2 60 60 dia. 3.55 3.65 0.139 0.143 ordering type marking package weight base qty delivery mode STPS60L15CW STPS60L15CW to-247 4.4 g. 30 tube n epoxy meets ul94,v0 n cooling method: c n recommended torque value: 0.8 m.n n maximum torque value: 1.0 m.n
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